2SK2975 fet equivalent, rf power mos fet.
* High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
* High efficiency:55% typ.
* Source case type seramic package (connected internally to source)
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OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
FEATURES
* High power gain:Gpe≥8.4dB @VDD=9.6V,f=45.
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